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FDG6301N Datasheet
Datasheet specifications
| Datasheet's name | FDG6301N |
|---|---|
| File size | 79.41 KB |
| File type | |
| Number of pages | 8 |
Download Datasheet FDG6301N |
Download Datasheet |
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Other documentations
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Technical specifications
- RoHS: true
- Type: 2 N-Channel
- Category: Triode/MOS Tube/Transistor/MOSFETs
- Datasheet: onsemi FDG6301N
- Operating Temperature: -55°C~+150°C@(Tj)
- Power Dissipation (Pd): 300mW
- Total Gate Charge (Qg@Vgs): 0.4nC@4.5V
- Drain Source Voltage (Vdss): 25V
- Input Capacitance (Ciss@Vds): 9.5pF@10V
- Continuous Drain Current (Id): 220mA
- Gate Threshold Voltage (Vgs(th)@Id): 1.5V@250uA
- Reverse Transfer Capacitance (Crss@Vds): -
- Drain Source On Resistance (RDS(on)@Vgs,Id): 4Ω@220mA,4.5V
- Package: SC-70-6
- Manufacturer: onsemi